IXGH72N60C3
IXGH72N60C3 is GenX3 600V IGBT manufactured by IXYS.
.Data Sheet.co.kr
Gen X3TM 600V IGBT
High-Speed PT IGBT for 40-100k Hz Switching
VCES IC110 VCE(sat) tfi (typ)
= = ≤ =
600V 72A 2.5V 55ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C (Chip Capability) TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 600 600 ±20 ±30 75 72 360 50 500 ICM = 150 VCE ≤ VCES 540 -55 ... +150 150 -55 ... +150 V V V V A A A A m J A W °C °C °C °C °C Nm/lb.in. g
TO-247 AD
Tab
G = Gate E = Emitter
C = Collector Tab = Collector
Features z z z z
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque
300 260 1.13/10 6
Optimized for Low Switching Losses Square RBSOA Avalanche Rated International Standard Package
Advantages z z
High Power Density Low Gate Drive Requirement
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C
Characteristic Values Min. Typ. Max. 600 3.0 5.5 V V
Applications z z z z z z z z
VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 50A, VGE = 15V
50 μA 1 m A ±100 n A V V
TJ = 125°C
2.10 1.65
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DS99961B(11/09)
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