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Advance Technical Data
HiPerFAST TM IGBT with Diode
Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching
IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE(sat) tfi(typ)
= 600 V = 75 A < 1.8 V = 100 ns
Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 75 60 300 ICM = 150 V V V V A A A A
TO-264 AA (IXGK)
(TAB) C E
G
PLUS247 (IXGX)
(TAB)
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500 -55 ... +150 150 -55 ...
IXGK60N60B2D1 Datasheet
