IXGN200N60 Description
Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.
IXGN200N60 Key Features
- high power dissipation Isolation voltage 3000 V~ Very high current, fast switching IGBT Low VCE(sat)
- for minimum on-state conduction losses MOS Gate turn-on
- drive simplicity Low collector-to-case capacitance (< 50 pF) Low package inductance (< 5 nH)
- easy to drive and to protect
- VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V