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IXGN200N60B - IGBT

Key Features

  • International standard package miniBLOC.
  • Aluminium nitride isolation - high power dissipation.
  • Isolation voltage 3000 V~.
  • Very high current, fast switching IGBT.
  • Low VCE(sat) - for minimum on-state conduction losses.
  • MOS Gate turn-on - drive simplicity.
  • Low collector-to-case capacitance (< 50 pF).
  • Low package inductance (< 5 nH) - easy to drive and to protect.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGN200N60 HiPerFAST IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE(sat) = 600 V = 200 A = 2.1 V E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 2.4 W Clamped inductive load, L = 30 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 200 120 400 ICM = 200 @ 0.8 VCES 600 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C V~ V~ SOT-227B, miniBLOC E G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter 50/60 Hz IISOL £ 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.