IXGN200N60B Description
Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE(sat) = 600 V = 200 A = 2.1 V E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW.
IXGN200N60B Key Features
- International standard package miniBLOC
- Aluminium nitride isolation
- high power dissipation
- Isolation voltage 3000 V~
- Very high current, fast switching IGBT
- Low VCE(sat)
- for minimum on-state conduction losses
- MOS Gate turn-on
- drive simplicity
- Low collector-to-case capacitance (< 50 pF)