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IXGN200N60B3 - Medium-Speed Low-Vsat PT IGBT

Key Features

  • z International Standard Package miniBLOC z UL Recognized z Aluminium Nitride Isolation - High Power Dissipation z Isolation Voltage 3000 V~ z Very High Current IGBT z Low VCE(sat) for Minimum on-state Conduction Losses z MOS Gate Turn-On - Drive Simplicity z Low Collector-to-Case Capacitance (< 50 pF) z Low Package Inductance (< 5 nH) - Easy to Drive and to Protect Advantages z High Power Density z Low Gate Drive Requirement.

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Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GenX3TM 600V IGBT Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching IXGN200N60B3 Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque (M4) Maximum Ratings 600 V 600 V ±20 V ±30 V 300 A 200 A 200 A 1200 A ICM = 300 A VCE ≤ VCES 830 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 2500 V~ 3000 V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in.