IXGN200N60B3 Description
+150 °C 2500 V~ 3000 V~ 1.5/13 1.3/11.5 Nm/lb.in.
IXGN200N60B3 Key Features
- High Power Dissipation z Isolation Voltage 3000 V~ z Very High Current IGBT z Low VCE(sat) for Minimum on-state
- Drive Simplicity z Low Collector-to-Case Capacitance
- Easy to Drive and to Protect