IXGN200N60A2 Description
+150 °C °C °C 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 30 g SOT-227B, miniBLOC Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter.
IXGN200N60A2 Key Features
- high power dissipation z Isolation voltage 3000 V~ z Very high current IGBT z Low VCE(sat) for minimum on-state
- drive simplicity z Low collector-to-case capacitance
- easy to drive and to protect