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IXGN200N60A2 - IGBT

Key Features

  • z International standard package miniBLOC z Aluminium nitride isolation - high power dissipation z Isolation voltage 3000 V~ z Very high current IGBT z Low VCE(sat) for minimum on-state conduction losses z MOS Gate turn-on - drive simplicity z Low collector-to-case capacitance (< 50 pF) z Low package inductance (< 5 nH) - easy to drive and to protect Symbol VGE(th) ICES IGES VCE(sat) Test Conditions IC = 1 mA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC110, VGE = 15 V Charac.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Optimized for Switching up to 5 kHz IXGN 200N60A2 VCES IC25 VCE(sat) = 600 V = 200 A = 1.35 V Preliminary Data Sheet Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM IC25 IC110 ICM SSOA (RBSOA) = 25°C to 150°C = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 2.0 Ω Clamped inductive load PC TJ TJM Tstg VISOL Md TC = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Mounting torque Terminal connection torque (M4) Weight E Maximum Ratings 600 V 600 V ±20 V ±30 V 200 A 100 A 400 A ICM = 200 @ 0.8 VCES 700 A W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in.