IXGP20N100 Description
IGBT Preliminary Data Sheet IXGA 20N100 VCES IXGP 20N100 IC25 VCE(sat) = 1000 V = 40 A = 3.0 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC.
IXGP20N100 Key Features
- International
- MOS Gate turn-on
- drive simplicity