IXGP20N120 Description
+150 300 260 W °C °C °C °C.
IXGP20N120 Key Features
- International
- High current handling capability
- MOS Gate turn-on
- drive simplicity
IXGP20N120 is IGBT manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
IXYS |
IXGP20N120B | High Voltage IGBT |
IXYS |
IXGP20N120BD1 | High Voltage IGBT |
+150 300 260 W °C °C °C °C.