Datasheet4U Logo Datasheet4U.com

IXGP20N120B - High Voltage IGBT

Key Features

  • z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z Saves space (two devices in one package) z Easy to mount with 1 screw z Reduces assembly time and cost Symbol VGE(th) ICES IGES VCE(sat) Test Conditions IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V Note 2 Ch.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXGP20N120B3 GenX3 1200V IGBT IXYS Corporation
IXGP20N120 IGBT IXYS Corporation
IXGP20N120A3 GenX3 1200V IGBTs IXYS Corporation
IXGP20N100 IGBT IXYS Corporation
IXGP20N60B IGBT IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGP20N120BD1 High Voltage IGBT
IXGP28N60A3 Ultra Low Vsat PT IGBT
IXGP28N60A3M Ultra Low Vsat PT IGBT
IXGP2N100 High Voltage IGBT
IXGP2N100A High Voltage IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 Preliminary Data Sheet VCES IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 3.4 V = 160 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg Md Mounting torque (M3.5 screw) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight D1 Maximum Ratings 1200 1200 V V ±20 V ±30 V 40 A 20 A 100 A ICM = 40 @0.8 VCES 190 A W -55 ... +150 150 -55 ... +150 °C °C °C 0.55/5 Nm/lb.in.