IXGR60N60U1 - LowV-CE(sat) IGBT

Features

Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation.
Low collector to tab capacitance (.

IXGR60N60U1 LowV-CE(sat) IGBT by IXYS Corporation - Datasheet Preview — Datasheet preview – IXGR60N60U1

Datasheet Details

Part number	IXGR60N60U1
Manufacturer	IXYS (now Littelfuse)
File Size	141.23 KB
Description	LowV-CE(sat) IGBT
Datasheet	IXGR60N60U1 Datasheet
Additional preview pages of the IXGR60N60U1 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Low VCE(sat) IGBT with Diode ISOPLUS247TM IXGR 60N60U1 VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC100 ICM Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms Maximum Ratings 600 600 ±20 ±30 75 60 200 ICM = 100 300 -55 ..+ 150 150 -55...

Published: Aug 6, 2007 |