IXGR60N60U1
IXGR60N60U1 is LowV-CE(sat) IGBT manufactured by IXYS.
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Low VCE(sat) IGBT with Diode
ISOPLUS247TM
IXGR 60N60U1
VCES IC25 VCE(sat)
= = =
600 V 75 A 1.7 V
(Electrically Isolated Back Surface)
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC100 ICM
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms
Maximum Ratings 600 600 ±20 ±30 75 60 200 ICM = 100 300 -55 ..+ 150 150 -55...+ 150 V V V V A A A A W °C °C °C °C V g
ISOPLUS247TM
Isolated back surface- G = Gate, E = Emitter,
- Patent pending Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low collector to tab capacitance (<25p F)
- Rugged polysilicon gate cell structure
- Fast intrinsic Rectifier
- Low VCE(sat) IGBT and standard diode for minimum on-state conduction losses
- MOS Gate turn-on for drive simplicity Applications
- Solid state relays
- Capacitor discharge circuits
- High power ignition circuits Advantages
- Space savings (two devices in one package)
- Reduces assembly time and cost
- High power density C = Collector, TAB =...
