IXGR60N60U1 Description
.. Low VCE(sat) IGBT with Diode ISOPLUS247TM IXGR 60N60U1 VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC100 ICM Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE =.
IXGR60N60U1 Key Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low collector to tab capacitance (<25pF)
- Rugged polysilicon gate cell structure
- Fast intrinsic Rectifier
- Low VCE(sat) IGBT and standard diode for minimum on-state conduction losses
- MOS Gate turn-on for drive simplicity