IXGT30N60BU1 Datasheet | IXYS

Hi Per FASTTM IGBT with Diode bi Pack IXGH 30N60BU1 IXGT 30N60BU1 VCES IC25 VCE(sat) tfi TO-268 (IXGT) = 600 V = 60 A = 1.8 V = 100 ns .. Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 30 120 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-268 TO-247 AD 4 6 V V V V A A A A G = Gate, E = Emitter, G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector W °C °C °C °C Nm/lb.in. g g Features Ÿ International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD Ÿ High frequency IGBT and antiparallel FRED in one package Ÿ High current handling capability Ÿ Newest generation HDMOSTM process Ÿ MOS Gate turn-on - drive simplicity Applications Ÿ AC motor speed control Ÿ DC servo and robot drives Ÿ DC choppers Ÿ Uninterruptible power supplies (UPS) Ÿ Switched-mode and resonant-mode power supplies Advantages Ÿ Space savings (two devices in one package) Ÿ High power density Ÿ Optimized VCE(sat) and switching speeds for medium frequency applications 97501E (02/02) Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 0.072 2.5 -0.286 500 3 ±100 TJ = 150°C 1.8 2.0 5.5 V %/K V %/K µA m A n A V V BVCES VGE(th) ICES IGES VCE(sat) VCE(sat) IC = 750µA, VGE = 0 V BVCES temperature coefficient IC = 250 µA, VCE = VGE VGE(th) temperature coefficient VCE = 0.8 - VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC IC = IC110, VGE = 15 V = IC110, VGE = 15 V TJ = 25°C TJ = 150°C © 2002 IXYS All rights reserved IXGH 30N60BU1 IXGT 30N60BU1 Symbol Test Conditions Characteristic Values (TJ =...