IXGT31N60 Overview
Ultra-Low VCE(sat) IGBT IXGH 31N60 IXGT 31N60 VCES IC25 VCE(sat) = 600 V = 60 A = 1.7 V Symbol .. VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A A W °C °C °C °C g g TO-247 AD G C E (TAB) TO-268 G E (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) TO-247 1.13/10 Nm/lb.in.
IXGT31N60 Key Features
- International standard package
- Low VCE(sat)
- for minimum on-state conduction losses
- High current handling capability
- MOS Gate turn-on
- drive simplicity