IXKN40N60C
Overview
- 5/13 Nm/. 1.5/13 Nm/. miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly Fast CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density q MOSFET Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 TJ = 25°C TJ = 125°C 0.5 50 25 70 3.5 5.5 ±100 V q
