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IXKN45N80C - CoolMOS Power MOSFET

Features

  • RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 4 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 640 V; ID = 70 A miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - International standard package SOT-227 - Easy screw assembly fast CoolMOS power MOSFET - 3rd generation - High blocking capability - Low on resistance - Avalanche rat.

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www.DataSheet4U.com Advanced Technical Information CoolMOS Power MOSFET IXKN 45N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 800 V ID25 44 A RDS(on) 74 mΩ MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 17 A;diF/dt≤ 100 A/µs TVJ = 150°C ID = 4 A; L = 80 mH; TC = 25°C ID = 17 A; L = 3 µH; TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings miniBLOC, SOT-227 B E72873 S 800 ±20 44 30 6 670 0.5 V V A A V/ns G S D G = Gate S = Source D = Drain mJ mJ Either source terminal at miniBLOC can be used as main or kelvin source Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.
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