IXKN45N80C
Overview
- RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 4 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 640 V; ID = 70 A miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - International standard package SOT-227 - Easy screw assembly fast CoolMOS power MOSFET - 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density 50 µA µA 400 nA
- 332 36 168 25 15 75 10 1.0 1.2 nC nC nC ns ns ns ns V
- VGS= 10 V; VDS = 640 V; ID = 70 A; RG = 1.8 Ω (reverse conduction) IF = 37.5 A; VGS = 0 V
