IXKN75N60C
Overview
- RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 5 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 100 A
- 05 mA mA
- miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density 200 nA 440 112 246 30 95 100 10 0.9 1.1 nC nC nC ns ns ns ns V
- VGS= 10 V; VDS = 380 V; ID = 50 A; RG = 1 Ω (reverse conduction) IF = 37.5 A; VGS = 0 V
