IXSH25N100 Overview
Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; +150 V V V V A A A A µs TO-247 AD (IXSH) V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight g G C E TO-204 AE (IXSM) C W °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from...
IXSH25N100 Key Features
- for low on-state conduction losses High current handling capability MOS Gate turn-on
- drive simplicity Fast Fall Time for switching speeds up to 20 kHz
- VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
IXSH25N100 Applications
- VCES, higher TJ or increased RG Inductive load, TJ = 125 ° C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 4.7 Ω Remarks: Switching times may increase