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IXSH30N60 Datasheet

Low Vce(sat) IGBT

Manufacturer: IXYS (now Littelfuse)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IXSH30N60 Overview

Symbol VCES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A A µs TO-247 AD (IXSH) VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight G C E TO-204 AE (IXSM) C W °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector.

IXSH30N60 Key Features

  • for low on-state conduction losses High current handling capability MOS Gate turn-on
  • drive simplicity Fast Fall Time for switching speeds up to 20 kHz

IXSH30N60 Distributor