IXYS IXSH30N60B2D1
High Speed IGBT with Diode
| Part No. | IXSH30N60B2D1 |
|---|---|
| Datasheet | IXSH30N60B2D1 Download |
| Manufacturer |  IXYS |
| Description | High Speed IGBT with Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
600 600 ± 20 ± 30 48 30 28 90 ICM = 48 @ 0.8 VCES 10 250 -55 ... +150 150 -55 ... +150 V V V V A A A A A TO-247 (IXSH) G C C (TAB) E TO-268 (IXST) G µs W °C °C °C g g °C °C G = Gate E = Emitter E C (TAB) C = Collector TAB = Collector TO-247 TO-268 6 5 300 260 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10sFEATURES
● International standard package● Guaranteed Short Circuit SOA capability
● Low VCE(sat) - for low on-state conduction losses
● High current handling capability
● MOS Gate turn-on - drive simplicity
● Fast fall time for switching speeds up to 20 kHz
APPLICATIONS
● AC motor speed control● Uninterruptible power supplies (UPS)
● Welding Advantages
● High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4.0 7.0 150 1 ± 100 2.5 V µA mA nA V VGE(th) ICES IGES VCE(sat) IC = 750 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE...
