IXSH35N140A Key Features
- for Minimum on-state Conduction Losses
IXSH35N140A is High Voltage High speed IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXSH35N120A | High Voltage High speed IGBT |
| IXSH30N60B2D1 | High Speed IGBT with Diode |
| IXSH10N60B2D1 | High-Speed IGBT |
| IXSH15N120B | High-Voltage IGBT |
| IXSH16N60U1 | IGBT |
+150 1.13 / 10 300 260 6 W °C °C °C Nm/lb.in. °C °C g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 4mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 35A, VGE = 15V, Note 1 Characteristic Values Min. 4.5 7.5 V 50 μA 2 mA ±100 nA 3.4 4.0 V TO-247 G CE Tab G = Gate E = Emitter C = Collector Tab = Collector.