IXSH10N60B2D1 Datasheet | IXYS

.. High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25 = 20 A V CE(sat) = 2.5 V D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) t SC (SCSOA) PC TJ TJM Tstg Md Weight Mounting torque TO-247 TO-3P TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C Maximum Ratings 600 600 ± 20 ± 30 20 10 11 30 ICM = 20 @ 0.8 VCES 10 100 -55 ... +150 150 -55 ... +150 V V V V A A A A A µs W °C °C °C g g °C G G C E (TAB) TO-247 (IXSH) TO-3P (IXSQ) (TAB) G = Gate E = Emitter C = Collector TAB = Collector 1.3/10 Nm/lb. in 5 5 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4.0 7.0 75 200 ± 100 2.5 V V µA µA n A V Features - International standard package - Guaranteed Short Circuit SOA capability - Low VCE(sat) - for low on-state conduction losses - High current handling capability - MOS Gate turn-on - drive simplicity - Fast fall time for switching speeds up to 20 k Hz Applications - AC motor speed control - Uninterruptible power supplies (UPS) - Welding...