IXSH10N60B2D1 Description
+150 V V V V A A A A A µs W °C °C °C g g °C G G C E (TAB) TO-247 (IXSH) TO-3P (IXSQ) C E (TAB) G = Gate E = Emitter C = Collector TAB = Collector 1.3/10 Nm/lb. in 5 5 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. 600 4.0 7.0 75 200 ± 100 2.5 V V µA µA nA.
IXSH10N60B2D1 Key Features
- International standard package
- Guaranteed Short Circuit SOA capability
- Low VCE(sat)
- for low on-state conduction losses
- High current handling capability
- MOS Gate turn-on
- drive simplicity
- Fast fall time for switching speeds up to 20 kHz