IXSH20N60B2D1
IXSH20N60B2D1 is High Speed IGBT manufactured by IXYS.
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High Speed IGBT
Short Circuit SOA Capability
Preliminary Data Sheet
IXSH 20N60B2D1
VCES = 600 V I C25 = 35 A V CE(sat) = 2.5 V
D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) t SC (SCSOA) PC TJ TJM Tstg Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Symbol Test Conditions TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive TC = 25°C Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C Maximum Ratings 600 600 ± 20 ± 30 35 20 21 60 ICM = 32 @ 0.8 VCES 10 190 -55 ... +150 150 -55 ... +150 2 300 260 V V V V A A A A A Features
µs W °C °C °C g °C °C
- International standard package
- Guaranteed Short Circuit SOA capability
- Low VCE(sat)
- for low on-state conduction losses
- High current handling capability
- MOS Gate turn-on
- drive simplicity
- Fast fall time for switching speeds up to 20 k Hz Applications
- AC motor speed control
- Uninterruptible power supplies (UPS)
- Welding Advantages
- High power density
TO-247 (IXSH)
G = Gate E = Emitter
C = Collector TAB = Collector
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3.5 TJ = 125°C 6.5 85 0.6 ± 100 2.5 V V µA m A n A V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 750 µA, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = ± 20 V IC = 16A, VGE = 15 V
DS99174(10/04) © 2004 IXYS All rights reserved
IXSH .....