IXSH20N60B2D1 Datasheet PDF

MAXIMUM RATINGS

600 600 ± 20 ± 30 35 20 21 60 ICM = 32 @ 0.8 VCES 10 190 -55 ... +150 150 -55 ... +150 2 300 260 V V V V A A A A A

FEATURES

µs W °C °C °C g °C °C
● International standard package
● Guaranteed Short Circuit SOA capability
● Low VCE(sat) - for low on-state conduction losses
● High current handling capability
● MOS Gate turn-on - drive simplicity
● Fast fall time for switching speeds up to 20 kHz

APPLICATIONS

● AC motor speed control
● Uninterruptible power supplies (UPS)
● Welding Advantages
● High power density G TO-247 (IXSH) C E G = Gate E = Emitter C = Collector TAB = Collector Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3.5 TJ = 125°C 6.5 85 0.6 ± 100 2.5 V V µA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 750 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ± 20 V IC = 16A, VGE = 15 V DS99174(10/04) © 2004 IXYS All rights reserved IXSH 20N60B2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.