IXSH16N60U1
IXSH16N60U1 is IGBT manufactured by IXYS.
Low VCE(sat) IGBT with Diode
Short Circuit SOA Capability
Preliminary data
IXSH 16N60U1 VCES IC25 VCE(sat)typ
= 600V = 16A = 1.8V
Symbol
Test Conditions
VCES VCGR
V GES
VGEM
IC25 IC90 ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient
TC = 25°C TC = 90°C TC = 25°C, 1 ms
V= GE
V,
=
125°C,
=
Clamped inductive load, L = 300 m H t SC
(SCSOA)
TJ TJM Tstg
Weight
V= GE
V,
V CE
=
V,
=
125°C...
