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IXSH15N120B - High-Voltage IGBT

Key Features

  • High Blocking Voltage.
  • Epitaxial Silicon drift region - fast switching - small tail current - low switching losses.
  • MOS gate turn-on for drive simplicity Molding epoxies meet UL 94 V-0 flammability classification.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HIGH Voltage IGBT IXSH 15N120B IXST 15N120B "S" Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 30 A = 1200 V = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient 1200 1200 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 30 15 60 V= GE 15 V, T J = 125°C, R G = 10 W Clamped inductive load I = 40 CM @ 0.8 VCES TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive 10 V V V V A A A A ms PC TC = 25°C T J TJM T stg Md Mounting torque (TO-247) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering (TO-268) 150 W -55 ... +150 150 -55 ... +150 °C °C °C 1.