IXSH15N120BD1 Datasheet | IXYS

IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preliminary data .. Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 40 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W °C °C °C °C °C g g TO-247 AD (IXSH) VGES VGEM IC25 IC90 ICM SSOA (RBSOA) t SC PC TJ TJM Tstg Md (TAB) TO-268 ( IXST) (TAB) Features - High Blocking Voltage - Epitaxial Silicon drift region - fast switching - small tail current - low switching losses - MOS gate turn-on for drive simplicity - Molding epoxies meet UL 94 V-0 flammability classification Applications Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 260 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering (TO-268) Weight TO-247 TO-268 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 3 TJ = 125°C 6 50 2.5 ±100 TJ = 125°C 3.0 2.8 3.4 V V m A m A n A V V - - - -...