IXSH15N120AU1
IXSH15N120AU1 is IGBT manufactured by IXYS.
PRELIMINARY DATA SHEET
IGBT with Diode
"S" Series
- Improved SCSOA Capability
G E Symbol
..
IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 82Ω T C = 25°C
Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 30 @ 0.8 VCES 5 150 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-247AD
V CES V CGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) tsc PC TJ TJM T STG Md Weight
µs W °C °C °C
Features
- High frequency IGBT with guaranteed Short Circuit SOA capability.
- IGBT with anti-parallel diode in one package
- 2nd generation HDMOSTM process Low VCE(sat)
- for minimum on-state conduction losses
- MOS Gate turn-on
- drive simplicity Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switched-mode and resonant-mode power supplies
- DC choppers Advantages
- Saves space (two devices in one package)
- Easy to mount (isolated mounting hole)
- Reduces assembly time and cost
- Operates cooler
- Easier to assemble
Mounting torque...
