IXSH15N120AU1 Description
IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode "S" Series - Improved SCSOA Capability C G E Symbol .. IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; +150 V V V V A A A A TO-247AD V CES V CGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) tsc PC TJ TJM T STG Md Weight C G E µs W °C °C.
IXSH15N120AU1 Key Features
- High frequency IGBT with guaranteed Short Circuit SOA capability
- IGBT with anti-parallel diode in one package
- 2nd generation HDMOSTM process Low VCE(sat)
- for minimum on-state conduction losses
- MOS Gate turn-on
- drive simplicity