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IXSH15N120AU1 - IGBT

Key Features

  • High frequency IGBT with guaranteed Short Circuit SOA capability.
  • IGBT with anti-parallel diode in one package.
  • 2nd generation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode "S" Series - Improved SCSOA Capability C G E Symbol www.DataSheet4U.com IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 82Ω T C = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 30 @ 0.8 VCES 5 150 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-247AD V CES V CGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) tsc PC TJ TJM T STG Md Weight C G E µs W °C °C °C Features • High frequency IGBT with guaranteed Short Circuit SOA capability.