IXSH30N60A Description
Symbol VCES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A A µs TO-247 AD (IXSH) VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight G C E TO-204 AE (IXSM) C W °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector.
IXSH30N60A Key Features
- for low on-state conduction losses High current handling capability MOS Gate turn-on
- drive simplicity Fast Fall Time for switching speeds up to 20 kHz