• Part: IXSM45N100
  • Description: Low VCE(sat) IGBT - Short Circuit SOA Capability
  • Manufacturer: IXYS
  • Size: 137.19 KB
Download IXSM45N100 Datasheet PDF
IXYS
IXSM45N100
IXSM45N100 is Low VCE(sat) IGBT - Short Circuit SOA Capability manufactured by IXYS.
- Part of the IXSH45N100 comparator family.
.. Low VCE(sat) IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) t SC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, L = 30 m H VGE = 15 V, VCE = 0.6 - VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 75 45 180 ICM = 90 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A ms TO-247 AD (IXSH) TO-204 AE (IXSM) W °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 5 TJ = 25°C TJ = 125°C 8 250 1 ±100 2.7 V V m A m A n A V Features - International standard packages - Guaranteed Short Circuit SOA capability - Low VCE(sat) - for low on-state conduction losses - High current handling capability - MOS Gate turn-on - drive simplicity BVCES VGE(th) ICES IGES...