IXSR35N120BD1 Description
IGBT with Diode ISOPLUS 247TM Short Circuit SOA Capability IXSR 35N120BD1 (Electrically Isolated Backside) VCES IC25 VCE(sat) tfi(typ) = 1200 V = 70 A = 3.6 V = 180 ns Symbol .. Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A A µs W W °C °C °C V~ °C.
IXSR35N120BD1 Key Features
- Patent pending
- drive simplicity