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IGBT with Diode ISOPLUS 247TM
Short Circuit SOA Capability
IXSR 35N120BD1
(Electrically Isolated Backside)
VCES IC25 VCE(sat) tfi(typ)
= 1200 V = 70 A = 3.6 V = 180 ns
Symbol
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH VGE= 15 V, VCE = 720 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C IGBT Diode
Maximum Ratings 1200 1200 ± 20 ± 30 70 30 140 ICM = 90 @ 0.8 VCES 10 250 150 -55 ... +150 150 -55 ...
IXSR35N120BD1 Datasheet
