IXSA10N60B2D1 Description
High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet .. +150 300 250 (TO-220) V V V V A A A A A µs W °C °C °C °C °C.
IXSA10N60B2D1 Key Features
- International standard packages
- Guaranteed Short Circuit SOA capability
- Low VCE(sat)
- for low on-state conduction losses
- High current handling capability
- MOS Gate turn-on
- drive simplicity
- Fast fall time for switching speeds up to 20 kHz