IXSA10N60B2D1 - High Speed IGBT

Features

International standard packages.
Guaranteed Short Circuit SOA capability.
Low VCE(sat) - for low on-state conduction losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Fast fall time for switching speeds up to 20 kHz.

IXYS Corporation

Datasheet Details

Part number	IXSA10N60B2D1
Manufacturer	IXYS Corporation
File Size	622.70 KB
Description	High Speed IGBT
Datasheet	IXSA10N60B2D1 Datasheet
Additional preview pages of the IXSA10N60B2D1 datasheet.

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Full PDF Text Transcription

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High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A I C25 V CE(sat) = 2.5 V D1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 20 10 11 30 ICM = 20 @ 0.8 VCES 10 100 -55 ... +150 150 -55 ...

Published: Aug 19, 2008 |