IXSA20N60B2D1 - High Speed IGBT

Features

International standard packages.
Guaranteed Short Circuit SOA capability.
Low VCE(sat) - for low on-state conduction losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Fast fall time for switching speeds up to 20 kHz.

IXYS Corporation

Datasheet Details

Part number	IXSA20N60B2D1
Manufacturer	IXYS Corporation
File Size	169.98 KB
Description	High Speed IGBT
Datasheet	IXSA20N60B2D1 Datasheet
Additional preview pages of the IXSA20N60B2D1 datasheet.

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Full PDF Text Transcription

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High Speed IGBT IXSA 20N60B2D1 IXSP 20N60B2D1 Short Circuit SOA Capability Preliminary Data Sheet VCES = 600 V IC25 = 35 A VCE(sat) = 2.5 V Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VCGlaEm= p1e5dVi,nTdJu=ct1iv2e5°loCa,dRG = 82Ω tSC (SCSOA) PC TJ TJM Tstg Weight VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Maximum Ratings 600 600 ± 20 ± 30 35 20 11 60 @ 0IC.M8 = 32 VCES 10 V V V V A A A A A μs 190 -55 ... +150 150 -55 ...

Published: Jul 25, 2015 |