IXST30N60B Description
+150 V V V V A A A A µs W °C °C °C TO-247 AD (IXSH) (TAB) TO-268 (D3) ( IXST) G S G = Gate S = Source (TAB) TAB = Drain.
IXST30N60B is High Speed IGBT manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
IXYS |
IXST30N60B2D1 | High Speed IGBT with Diode |
+150 V V V V A A A A µs W °C °C °C TO-247 AD (IXSH) (TAB) TO-268 (D3) ( IXST) G S G = Gate S = Source (TAB) TAB = Drain.