IXST30N60B2D1 Overview
.. High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE(sat) = 2.5 V Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test.
IXST30N60B2D1 Key Features
- International standard package
- Guaranteed Short Circuit SOA capability
- Low VCE(sat)
- for low on-state conduction losses
- High current handling capability
- MOS Gate turn-on
- drive simplicity
- Fast fall time for switching speeds up to 20 kHz