IXST24N60BD1 Description
+150 V V V V A A A A µs W °C °C °C TO-247 AD (IXSH) (TAB) G C E TO-268 (D3) ( IXST) G E G = Gate E = Emitter (TAB) TAB = Collector.
IXST24N60BD1 Key Features
- for low on-state conduction losses High current handling capability MOS Gate turn-on
- drive simplicity Fast Fall Time for switching speeds up to 50 kHz