IXST15N120B Description
+150 °C °C °C 1.13/10 Nm/lb.in.
IXST15N120B Key Features
- High Blocking Voltage
- Epitaxial Silicon drift region
- fast switching
- small tail current
- low switching losses
- MOS gate turn-on for drive simplicity Molding epoxies meet UL 94 V-0 flammability classification