IXST15N120BD1 Description
IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preliminary data .. Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load TJ = 125°C, VGE = 720.
IXST15N120BD1 Key Features
- High Blocking Voltage
- Epitaxial Silicon drift region
- fast switching
- small tail current
- low switching losses
- MOS gate turn-on for drive simplicity
- Molding epoxies meet UL 94 V-0 flammability classification