IXST30N60CD1
IXST30N60CD1 is manufactured by IXYS.
High Speed IGBT with Diode
IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1
Short Circuit SOA Capability
Preliminary data
VCES IC25 VCE(sat) t fi
TO-247AD (IXSH)
= = = =
600 V 55 A 2.5 V 70 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive TC = 25°C
Maximum Ratings
600 600 ±20 ±30 55 30 110 ICM = 60 10 200 -55 ... +150 150 -55 ... +150
V V V V A A A A ms W °C °C °C TO-264...
