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IXST35N120B - IGBT

Features

  • l Mounting torque (TO-247) 1.13/10 Nm/lb. in. 300 l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Weight TO-247 TO-268 Epitaxial Silicon drift region - fast switching - small tail current MOS gate turn-on for drive simplicity 6 4.

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IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 5 Ω Clamped inductive load Maximum Ratings 1200 1200 ± 20 ± 30 70 35 140 ICM = 90 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A µs W °C °C °C °C g g TO-247 AD (IXSH) (TAB) G C E TO-268 ( IXST) G E (TAB) C = Collector TAB = Collector TJ = 125°C, VCE = 720 V; VGE = 15 V, RG = 22 Ω TC = 25°C G = Gate E = Emitter Features l Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 l Maximum lead temperature for soldering 1.6 mm (0.
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