IXST45N120B Key Features
- Epitaxial Silicon drift region
- fast switching
- small tail current
- MOS gate turn-on for drive simplicity
- Part: IXST45N120B
- Manufacturer: IXYS (official site)
- Size: 53.55 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXST40N60B | High Speed IGBT |
| IXST15N120B | High Voltage IGBT |
| IXST24N60B | High Speed IGBT |
| IXST24N60BD1 | High Speed IGBT |
| IXST30N60B2D1 | High Speed IGBT with Diode |
IXST45N120B Description
+150 °C °C °C 1.13/10 Nm/lb.in.