IXTA160N10T7 - Power MOSFET

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IXYS Corporation

Part number	IXTA160N10T7
Manufacturer	IXYS Corporation
File Size	158.89 KB
Description	Power MOSFET
Datasheet	IXTA160N10T7 Datasheet
Additional preview pages of the IXTA160N10T7 datasheet.

°C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C rated °C °C Low package inductance - easy to drive and to protect 175 °C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 1 mA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1 Characteristic Values Min. Ty.

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Published: Feb 13, 2015 |