°C Ultra-low On Resistance
°C Unclamped Inductive Switching (UIS) °C rated
°C °C
Low package inductance - easy to drive and to protect 175 °C Operating Temperature
g Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 1 mA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1
Characteristic Values Min. Ty.
Full PDF Text Transcription for IXTA160N10T7 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTA160N10T7. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ Symbol VDSS V...
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alanche Rated VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA..7) 100 V 100 V ± 30 160 120 430 25 500 3 V A A A A mJ V/ns 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) 430 -
IXTA160N10T7 Datasheet
