Overview: High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV/dt
PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 1000 V V ±20 V ±30 V
2A 8A
2A 150 mJ 5 V/ns 100 W - 55 ... +150 150
- 55 ... +150
300 260
1.13 / 10
2.5 3.0 °C °C °C °C °C Nm/lb.in.
g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 1000 V 2.0 4.
