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IXTA2N100 - High Voltage MOSFET

Key Features

  • z International Standard Packages z Avalanche Rated z Low Package Inductance (< 5nH) z Fast Switching Times Advantages z Easy to Mount z Space Savings z High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 1000 V V ±20 V ±30 V 2A 8A 2A 150 mJ 5 V/ns 100 W - 55 ... +150 150 - 55 ... +150 300 260 1.13 / 10 2.5 3.0 °C °C °C °C °C Nm/lb.in.