• Part: IXTA2N100P
  • Manufacturer: IXYS
  • Size: 259.82 KB
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Similar Part Number

Manufacturer Part Number Description
INCHANGE Logo Inchange Semiconductor IXTA2N100P N-Channel MOSFET
IXYS Corporation Logo IXYS IXTA2N100 High Voltage MOSFET
INCHANGE Logo Inchange Semiconductor IXTA2N100 N-Channel MOSFET

All IXTA2N100P datasheets

IXTA2N100P Description

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N100P IXTA2N100P IXTP2N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous.

IXTA2N100P Key Features

  • International Standard Packages
  • Low QG
  • Avalanche Rated
  • Low Package Inductance
  • Fast Intrinsic Rectifier
  • High Power Density
  • Easy to Mount
  • Space Savings