Datasheet Summary
Preliminary Technical Information
PolarTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA7N60PM IXTP7N60PM
VDSS ID25
RDS(on)
= 600V = 4A ≤ 1.1Ω
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
Maximum Ratings 600 600
8 c T
± 30 ± 40 4 14 V V A A 7 400 10 A mJ t e n
41 om
D S W Features g V V Ω r e .n a ww
600 3.0 TJ = 125°C ua
300 260 1.13/10 2.5 Characteristic Values Min. Typ. Max. 5.5...
