IXTA7N60P Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 3 g G = Gate S = Source D = Drain TAB = Drain.
IXTA7N60P Key Features
- easy to drive and to protect
- di/dt = 100 A/µs, VR = 100 V
IXTA7N60P Datasheet
| Part number | IXTA7N60P |
|---|---|
| Download | IXTA7N60P Datasheet (PDF) |
| File Size | 173.38 KB |
| Manufacturer | IXYS |
| Description | Power MOSFET |
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