The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TrenchMVTM Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
IXTC200N10T
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg
TL
VISOL Md Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
Transient
Maximum Ratings 100 100
± 30
V V
V
TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
TC = 25°C
101 75 500
40 1.5
160
-55 ... +175 175
-55 ... +175
A A A
A J
W
°C °C °C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds
300 °C 260 °C
50/60Hz, t = 1 minute, IISOL < 1mA, RMS
2500
Mounting force
11..65 / 2.5..14.6
V N/lb.
IXTC200N10T Datasheet
