IXTC200N10T Datasheet | Specifications & PDF Download

IXTC200N10T N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Stat.

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.3mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari

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TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS

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