isc N-Channel MOSFET Transistor ·FEATURES ·Stat.
INCHANGE
IXTC200N10T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.3mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari.
IXYS Corporation
IXTC200N10T - Power MOSFET
TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS.
