Overview: Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 =
RDS(on) ≤ 75 200 5.0 V A mΩ Symbol
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247 Maximum Ratings 75 75
± 20
200 75
540
25 750 V V
V
A A A
A mJ 3 V/ns 430 W -55 ... +175 175
-55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 5.5 g 6g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 75 V
2.0 4.0 V
± 200 nA
5 μA 250 μA 4.0 5.
