IXTH200N10T
IXTH200N10T is Power MOSFET manufactured by IXYS.
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH200N10T IXTQ200N10T
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL
Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque TO-247 TO-3P
Maximum Ratings 100 100
± 30 V
200 A 75 A 500 A
40 A 1.5 J
550 W
-55 ... +175 175
-55 ... +175
300 260
1.13 / 10
°C °C °C
°C °C
Nm/lb.in.
6.0 g 5.5 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID =...
