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IXTH6N120 - High Voltage Power MOSFET

Download the IXTH6N120 datasheet PDF. This datasheet also covers the IXTT6N120 variant, as both devices belong to the same high voltage power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International standard packages z Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT6N120_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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IXTH6N80A Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH6N50D2 N-Channel MOSFET
IXTH6N90 Standard Power MOSFET
IXTH6N90A Standard Power MOSFET
IXTH67N10 N-Channel MOSFET
IXTH68N20 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6N120 IXTT 6N120 VDSS ID25 RDS(on) = 1200 V = 6A = 2.6 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 Maximum Ratings 1200 V 1200 V ±20 V ±30 V 6 A 24 A 6 A 25 mJ 500 mJ 5 V/ns 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in.