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IXTH7P50 - P-Channel MOSFET

Features

  • International standard package.
  • Low R HDMOS process.
  • Rugged polysilicon gate cell structure.
  • Unclamped Inductive Switching (UIS) TM DS (on) JEDEC TO-247 AD Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Mounting torque 300 1.13/10 6.
  • Low package inductance (.

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VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 7P50 IXTH 8P50 -500V -7 A 1.5 Ω -500V -8 A 1.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C 7P50 8P50 7P50 8P50 7P50 8P50 Maximum Ratings -500 -500 ± 20 ± 30 -7 -8 -28 -32 -7 -8 30 180 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ W °C °C °C °C Nm/lb.in.
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