Overview: Advance Technical Information TrenchMVTM Power MOSFETs mon-Gate Pair
N-Channel Enhancement Mode Avalanche Rated IXTL2x220N075T 75 V VDSS = ID25 = 2x120 A RDS(on) ≤ 5.5 m Ω
D (Electrically Isolated Back Surface) D RG RG ISOPLUS i5-PakTM (IXTL) S Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C (bined die total = 240 A) Package Current Limit, RMS (bined die total = 150 A) TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C G S Maximum Ratings 75 75 ± 20 120 75 600 25 1.0 3 V V V A A A A J V/ns D S G
Isolated back surface S D
D = Drain G = Gate S = Source PD TJ TJM Tstg TL TSOLD VISOL FC Weight 150 -55 ... +175 175 -55 ... +175 W °C °C °C °C °C V N/lb.
